Thermal Conductivity of Si Nanowires Using Atomistic Phonon Dispersions
نویسندگان
چکیده
The thermal properties of Si nanowires (NWs) are of high interest for a variety of applications such as thermal management and thermoelectricity. Most simulation studies to date use the Si bulk dispersion within a confined geometry. The phonon dispersion in ultra-narrow 1D NWs, however, is different from the bulk dispersion, and can lead to different thermal properties. In this work, we study the thermal conductivity (κl) of ultra-narrow silicon NWs using the full-band confined phonon dispersion and Boltzmann transport theory. COMPUTATIONAL METHOD
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